1 Introduction to HR-Si interposer technology 1
1.1 Background 1
1.2 3D RF heterogeneous integration scheme 2
1.3 HR-Si interposer technology 7
1.4 TGV interposer technology 16
1.5 Summary 23
1.6 Main work of this book 24
References 25
2 Design， process， and electrical verification of HR-Si interposer for 3D heterogeneous RF integration 27
2.1 Introduction 27
2.2 Design and fabrication process of HR-Si TSV interposer 31
2.3 Design and analysis of RF transmission structure built on HR-Si TSV interposer 38
2.4 Research on HR-Si TSV interposer fabrication process 43
2.4.1 Double-sided deep reactive ion etching (DRIE) to open HR-Si TSV 43
2.4.2 Thermal oxidation to form firm insulation layer 44
2.4.3 Patterned Cu electroplating to achieve metallization and establish RDL layer 45
2.4.4 Electroless nickel electroless palladium immersion gold (ENEPIG) 54
2.4.5 Surface passivation 54
2.5 Electrical characteristics analysis of transmission structure on HR-Si TSV interposer 55
2.6 Conclusion 61
References 63
3 Design， verification， and optimization of novel 3D RF TSV based on HR-Si interposer 65
3.1 Introduction 65
3.2 HR-Si TSV-based coaxial-like transmission structure 69
3.3 Redundant RF TSV transmission structure 70
3.4 Sample processing and test result analysis 72
3.5 Optimization of HR-Si TSV interposer 83
3.6 Conclusion 90
References 93
4 HR-Si TSV integrated inductor 95
4.1 Introduction 95
4.2 HR-Si TSV interposer integrated planar inductor 96
4.3 Research on 3D inductor based on HR-Si interposer 113
4.4 Summary 123
References 123
5 Verification of 2.5D/3D heterogeneous RF integration of HR-Si interposer 125
5.1 Introduction 125
5.2 Four-channel 2.5D heterogeneous integrated L-band receiver 126
5.3 3D heterogeneous integrated channelized frequency conversion receiver based on HR-Si interposer 132
5.3.1 HR-Si interposer integrated microstrip interdigital filter 134
5.3.2 Design， fabrication， and test of HR-Si interposer 142
5.3.3 3D heterogeneous integrated assembly and test 145
5.4 Conclusions 150
References 151
6 HR-Si interposer embedded microchannel 153
6.1 Introduction 153
6.2 Design of a HR-Si interposer embedded microchannel 158
6.3 Thermal characteristics analy sis of a TSV interposer embedded microchannel 161
6.3.1 Simplified calculation based on a variable diffusion angle 162
6.3.2 Direct calculation based on analytical formula 163
6.3.3 A fitting formula based on simulation results 164
6.3.4 Equivalent thermal resistance network based on the high thermal conductivity path 164
6.4 Process development of a TSV interposer embedded microchannel 172
6.5 Characterization of cooling capacity of HR-Si interposer with an embedded microchannel 176
6.6 Evaluation of HR-Si interposer embedded with a cooling microchannel 178
6.7 Application verification of HR-Si interposer embedded with microchannel 188
6.8 Conclusions 191
References 192
7 Patch antenna in stacked HR-Si interposers 197
7.1 Introduction 197
7.2 Theoretical basis of patch antenna 200
7.3 Design of a patch antenna in stacked HR-Si interposers 200
7.4 Processing of a patch antenna in stacked HR-Si interposers 213
7.5 Test and analysis of patch antenna in stacked HR-Si TSV interposer 213
7.6 Summary 222
References 222
8 Through glass via technology 225
8.1 Introduction 225
8.2 TGV fabrication 225
8.3 Metallization of TGV 228
8.4 Passive devices based on TGV technology 230
8.4.1 Technology description 230
8.4.2 MIM capacitor 230
8.4.3 TGV-based bandpass filter 231
8.5 Embedded glass fan-out wafer-level package technology 235
8.5.1 Technology description 235
8.5.2 AIP enabled by eGFO package technology 236
8.5.3 3D RF integration enabled by eGFO package technology 242
8.6 2.5D heterogeneous integrated L-band receiver based on TGV interposer 242
8.7 Conclusions 249
References 250
9 Conclusion and outlook 251
Appendix 1 Abbreviations 255
Appendix 2 Nomenclature 259
Appendix 3 Conversion factors 267
Index 269
內容試閱：
The technical level and development scale of the integrated circuit (IC) industry is one of the important indicators to measure a country’s industrial competitiveness and comprehensive national strength， and is the source of modern economic development.The application of IC has already become routine in various industries， such as military satellites，radar， civilian automotive electronics，smart equipment， and consumer electronics，etc. At present，the IC industry has formed three major industrial chains of design，manufacturing and packaging testing， which have become the indispensable pillar in the IC industry.
IC packaging is an indispensable process in the IC industry，which is the bridge from chip to device and device to system.It is a key fundamental manufacturing part of the IC industry and a competitive commanding height for the core device manufacturing of the IC industry.
With the rapid development of IC technology，higher and higher requirements for miniaturization，multi-function，high reliability and low cost of electronic products are put forward. Facing this situation，the electronic packaging materials and technologies are undergoing rapid development，promoting lots of advanced packaging materials.Advanced electronic packaging materials and technologies are the core of IC packaging.
In order to promote the development of China’s advanced electronic packaging industry and meet the urgent needs of researchers ranged from teaching and scientific study to engineering developing in the field of electronic packaging，the editorial committee has invited famous specialists to write the Series on Advanced Electronic Packaging Technology and Key Materials in recent years (English ver- sion). The series includes:“Advanced Polyimide Materials” “From LED to Solid State Lighting” “Freeform Optics for LED Packages and Applications ” “Modeling， Analysis， Design and Tests for Electronics Packaging beyond Moore ” “TSV 3D RF Integration” etc.
This series of books systematically describes the advanced electronic packaging from three aspects: advanced packaging materials， advanced packaging technologies and advanced packaging simulation design methods.This series covers the most advanced packaging materials such as polyimide materials and packaging technologies such as freeform optical technology，TSV (through-silicon via technology) packaging， and advanced packaging simulation design methods such as multi-physics analysis and applications. In addition，this series also makes a planning outlook and forecast for the development trend of advanced electronic packaging.
This series of books is of great worth for workers engaged in scientific research， production and application in electronic packaging and related industries，and also has great reference significance for teachers and students of related majors in higher education institutions.
We believe that the publication of this series of books will play a positive role in promoting the development of China’s IC industry and advanced electronic packaging industry.
Finally，we would like to express our sincere gratitude to our colleagues who have worked hard in the preparation of this series. We also express our heartfelt thanks to those who participated in organizing the publication of this series!
C.P. Wong
IEEE Fellow
Member of Academy of Engineering of the USA
Member of Chinese Academy of Engineering
Former Bell Labs Fellow
Dean of Engineering， The Chinese University of Hong Kong
Regents’ Professor， Georgia Institute of Technology， Atlanta， GA 30332，USA
Sheng Liu，Ph.D.
IEEE Fellow，ASME Fellow
Chang Jiang Scholar Professor
Dean，School of Power and Mechanical Engineering
Founding Executive Director， Institute of Technological Sciences
Associate Dean of School of Microelectronics，Wuhan University
Professor of School of Mechanical Science and Engineering
Huazhong University of Science and Technology
Wuhan， Hubei，China
Wenhui Zhu， Ph.D.
National Invited Professor
College of Mechanical and Electrical Engineering
Central South University
Changsha， Hunan， China
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